H. Abnavi MSc (Hamed)

Hamed Abnavi holds a bachelor's degree in electrical engineering with a specialization in control engineering and robotics. He later earned a master’s degree in electrical engineering from Amirkabir University of Technology (Tehran Polytechnic), where his research focused on micro and nanoelectronic devices, particularly solid-state devices and thin-film technologies. In March 2023, Hamed began pursuing a PhD at the University of Twente, specializing in power semiconductor devices, with a focus on bidirectional power switches.

Expertise

• Engineering

  • Breakdown Voltage
  • Active Device
  • Field Effect Transistors
  • Mode Field
  • Surface Field
  • Gate Oxide

• Material Science

  • Metal-Oxide-Semiconductor Field-Effect Transistor
  • Silicon

Organisations

A New Silicon Accumulation-Mode Trench Bidirectional Switch
IEEE Transactions on Electron Devices, 72(4), 1900-1906.
Abnavi, H., Steenge, C., Berenschot, J. W., Tas, N. R. & Hueting, R. J. E.
https://doi.org/10.1109/TED.2025.3546582

Publications

Research profiles

Address

University of Twente

Carré (building no. 15), room C2732
Hallenweg 23
7522 NH Enschede
Netherlands

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Organisations