M. Nunnenkamp MSc (Moritz)


Engineering & Materials Science
Buffer Layers
Ferroelectric Materials
High Electron Mobility Transistors
Lead Zirconate Titanate
Two Dimensional Electron Gas
Medicine & Life Sciences


Nunnenkamp, M. (2023). Ferroelectrics for GaN based High Power Devices. [PhD Thesis - Research UT, graduation UT, University of Twente]. University of Twente. https://doi.org/10.3990/1.9789036558181
Nunnenkamp, M. (2022). Thickness influence of SrTiO3 buffer on CNO nanosheet templated PZT for High electron mobility transistor devices. Poster session presented at 28th International Workshop on Electronic Oxides (iWOE28), Portland, Maine, United States.
Zhou, R. , Li, L., Zhao, W. , Liao, Z. , Nguyen, M. D. , Nunnenkamp, M. , Houwman, E. P. , Koster, G. , Rijnders, A. J. H. M. , Gravesteijn, D. J. , & Hueting, R. J. E. (2020). Polarization effects in ferroelectric gate AlGaN/GaN High Electron Mobility Transistors. In Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020 (pp. 329-332). [9170173] (International Symposium on Power Semiconductor Devices and ICs (ISPSD); Vol. 2020). IEEE. https://doi.org/10.1109/ISPSD46842.2020.9170173

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Visiting Address

University of Twente
Drienerlolaan 5
7522 NB Enschede
The Netherlands

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Mailing Address

University of Twente
P.O. Box 217
7500 AE Enschede
The Netherlands