Carré

A.A.I. Aarnink (Tom)

Senior Process Engineer
EEMCS-EE-IDS
Carré C2615
a.a.i.aarnink@utwente.nl
+31534895912
Business card

Expertise

  • Material Science

    • Tungsten
    • Temperature
    • Electrical Resistivity
    • Aluminum Nitride
    • Boron
    • Chemical Vapor Deposition

  • Chemistry

    • Liquid Film
    • Atomic Layer Epitaxy

Organisations

Publications

2024

Electrical behavior of ALD-molybdenum films in the thin-film limit (2024)In 2024 IEEE 36th International Conference on Microelectronic Test Structures, ICMTS 2024 - Proceedings (IEEE International Conference on Microelectronic Test Structures). IEEE. Van Der Zouw, K., Dulfer, S. D., Aarnink, A. A. I. & Kovalgin, A. Y.https://doi.org/10.1109/ICMTS59902.2024.10520676

2023

Low-resistivity molybdenum obtained by atomic layer deposition (2023)Journal of vacuum science & technology A: vacuum, surfaces, and films, 41(5). Article 052402. van der Zouw, K., van der Wel, B. Y., Aarnink, A. A. I., Wolters, R. A. M., Gravesteijn, D. J. & Kovalgin, A. Y.https://doi.org/10.1116/6.0002804Area-Selective Low-Pressure Thermal Atomic Layer Deposition of Aluminum Nitride (2023)The Journal of physical chemistry C, 127(34), 17134-17145. van der Wel, B. Y., van der Zouw, K., Aarnink, A. A. I. & Kovalgin, A. Y.https://doi.org/10.1021/acs.jpcc.3c03063Batch furnace CVD of pure boron layers on Si and GaN substrates for lowleakage- current diode fabrication (2023)JST: Engineering and Technology for Sustainable Development, 33(2), 29-35. Vu, T. T. H., Batenburg, K. M., Aarnink, A. A. I., Knežević, T., Liu, X. & Nanver, L. K.https://doi.org/10.51316/jst.165.etsd.2023.33.2.5Thin-film (Al)BCN materials synthesized by sequential precursor pulses to mimic atomic layer deposition (2023)AIP advances, 13(2). Article 025237. Apaydin, R. O., Aarnink, A. A. I., Gravesteijn, D. J., De Jong, M. P. & Kovalgin, A. Y.https://doi.org/10.1063/6.0002331

2021

PureB diode fabrication using physical or chemical vapor deposition methods for increased back-end-of-line accessibility (2021)Solid-state electronics, 177. Article 107938. Thammaiah, S. D., Liu, X., Knežević, T., Batenburg, K. M., Aarnink, A. A. I. & Nanver, L. K.https://doi.org/10.1016/j.sse.2020.107938

2020

Study of the phase nature of boron- and nitrogen-containing films by optical and photoelectron spectroscopy (2020)Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 38(4). Article 044009. Onnink, A. J., Apaydin, R. O., Aarnink, A. A. I., de Jong, M. P., Gravesteijn, D. J. & Kovalgin, A. Y.https://doi.org/10.1116/6.0000193Method of forming a device structure using selective deposition of gallium nitride and system for same (2020)[Patent › Patent]. Banerjee, S., Aarnink, A. & Kovalgin, A.https://www.freepatentsonline.com/y2020/0194253.htmlConduction and electric field effect in ultra-thin tungsten films (2020)IEEE transactions on semiconductor manufacturing, 33(2), 202-209. Article 9016070. van der Zouw, K., Aarnink, A. A. I., Schmitz, J. & Kovalgin, A. Y.https://doi.org/10.1109/TSM.2020.2976886Comparative study of thermal and radical-enhanced methods for growing boron nitride films from diborane and ammonia (2020)Journal of vacuum science & technology A: vacuum, surfaces, and films, 38(3). Article 033411. Apaydin, R. O., Onnink, A. J., Liu, X., Aarnink, A. A. I., de Jong, M. P., Gravesteijn, D. J. & Kovalgin, A. Y.https://doi.org/10.1116/6.0000132

Research profiles

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