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Recent
De Jong, M. J.
, Salm, C.
, & Schmitz, J. (2020).
Effect of Ambient on the Recovery of Hot-Carrier Degraded Devices. In
2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings [9129540] (IEEE International Reliability Physics Symposium Proceedings; Vol. 2020-April). IEEE.
https://doi.org/10.1109/IRPS45951.2020.9129540
Liakopoulou, A.
, Annema, A. J., Bortot, L., Charifoulline, Z., MacIejewski, M., Prioli, M.
, Ravaioli, E.
, Salm, C.
, Schmitz, J.
, & Verweij, A. P. (2020).
Analysis of short-circuit transients in the LHC main dipole circuit.
Journal of physics: Conference series,
1559(1), [012077].
https://doi.org/10.1088/1742-6596/1559/1/012077
Ozturk, E.
, Dikkers, M. J.
, Batenburg, K. M.
, Salm, C.
, & Schmitz, J. (2020).
RFID Tag Failure after Thermal Overstress. In
2019 IEEE International Integrated Reliability Workshop, IIRW 2019 [8989885] IEEE.
https://doi.org/10.1109/IIRW47491.2019.8989885
Liakopoulou, A.
, Annema, A. J., Bortot, L., Charifoulline, Z., Maciejewski, M., Prioli, M.
, Ravaioli, E.
, Salm, C.
, Schmitz, J.
, & Verweij, A. P. (2019).
Analysis of Short-Circuit Transients in the LHC Main Dipole Circuit. Abstract from 14th European Conference on Applied Superconductivity, EUCAS 2019, Glasgow, United Kingdom.
de Jong, M. J.
, Salm, C.
, & Schmitz, J. (2019).
Recovery after hot-carrier injection: Slow versus fast traps.
Microelectronics reliability,
100-101, [113318].
https://doi.org/10.1016/j.microrel.2019.06.010
de Jong, M. J.
, Salm, C.
, & Schmitz, J. (2018).
Towards understanding recovery of hot-carrier induced degradation.
Microelectronics reliability,
88-90, 147-151.
https://doi.org/10.1016/j.microrel.2018.07.057
de Jong, M. J.
, Salm, C.
, & Schmitz, J. (2017).
Observations on the recovery of hot carrier degradation of hydrogen/deuterium passivated nMOSFETs.
Microelectronics reliability,
76-77, 136-140.
https://doi.org/10.1016/j.microrel.2017.07.038
Wang, J.
, Houwman, E. P.
, Salm, C.
, Nguyen, D. M.
, Vergeer, K.
, & Schmitz, J. (2017).
Process induced poling and plasma induced damage of thin films PZT.
Microelectronic engineering,
177, 13-18.
https://doi.org/10.1016/j.mee.2017.01.016
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7522NH Enschede
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University of Twente
Faculty of Electrical Engineering, Mathematics and Computer Science
Carré
C2611
P.O. Box 217
7500 AE Enschede
The Netherlands