Expertise
Detectors
Oxides
Electromigration
Temperature
Silicon
Metals
Plasmas
Imaging Techniques
Organizations
Publications
Recent
de Jong, M. J., Salm, C., & Schmitz, J. (2017). Observations on the recovery of hot carrier degradation of hydrogen/deuterium passivated nMOSFETs. Microelectronics reliability, 76-77, 136-140. DOI: 10.1016/j.microrel.2017.07.038
Wang, J., Houwman, E. P., Salm, C., Nguyen, D. M., Vergeer, K., & Schmitz, J. (2017). Process induced poling and plasma induced damage of thin films PZT. Microelectronic engineering, 177, 13-18. DOI: 10.1016/j.mee.2017.01.016
Wang, J., Bielen, J., Salm, C., Krijnen, G. J. M., & Schmitz, J. (2016). On the small-signal capacitance of RF MEMS switches at very low frequencies. Journal of the Electron Devices Society, 4(6), 459-465. DOI: 10.1109/JEDS.2016.2602261
Wang, J., Salm, C., Houwman, E., Schmitz, J., & Nguyen, M. (2016). Humidity and polarity influence on MIM PZT capacitor degradation and breakdown. In 2016 IEEE International Integrated Reliability Workshop (IIRW) (pp. 65-68). IEEE. DOI: 10.1109/IIRW.2016.7904903
Wang, J., Bielen, J., Salm, C., & Schmitz, J. (2016). Spring-constant measurement methods for RF-MEMS capacitive switches. In 2016 International Conference on Microelectronic Test Structures (ICMTS) (pp. 10-14). USA: IEEE. DOI: 10.1109/ICMTS.2016.7476164
Wang, J., Salm, C., & Schmitz, J. (2013). Comparison of C-V measurement methods for RF-MEMS capacitive switches. In IEEE International Conference on Microelectronic Test Structures, ICMTS 2013 (pp. 53-58). USA: IEEE Electron Devices Society. DOI: 10.1109/ICMTS.2013.6528145
Kazmi, S. N. R., Salm, C., & Schmitz, J. (2013). Deep reactive ion etching of in situ boron doped LPCVD Ge0.7Si0.3 using SF6 and O2 plasma. Microelectronic engineering, 110, 311-314. DOI: 10.1016/j.mee.2013.02.034
van der Graaf, H., Aarnink, A. A. I., Aarts, A., van Bakel, N., Berbee, E., Berkien, A., ... Wyrsch, N. (2013). The gridpix detector: History and perspective. Modern physics letters. A, 28(28-13), 13400211-13400217. DOI: 10.1142/S021773231340021X
Kazmi, S. N. R., Salm, C., & Schmitz, J. (2013). Cryogenic reactive ion etching of in-situ highly boron doped LPCVD poly Si0.3Ge0.7 using SF6 and O2 plasma. In 38th International Conference on Micro and Nano Engineering (pp. 311-314). (Microelectronic Engineering; Vol. 110). Amsterdam: ELSEVIER. DOI: 10.1016/j.mee.2013.02.034
UT Research Information System
Courses
Contact Details
Visiting Address
University of Twente
Faculty of Electrical Engineering, Mathematics & Computer Science
Carré
(building no. 15), room 2611
Hallenweg 23
7522NH Enschede
The Netherlands
Mailing Address
University of Twente
Faculty of Electrical Engineering, Mathematics & Computer Science
Carré
2611
P.O. Box 217
7500 AE Enschede
The Netherlands