Expertise
Material Science
- Silicon
- Anisotropic Etching
- Metal-Oxide-Semiconductor Field-Effect Transistor
- Surface (Surface Science)
Engineering
- Breakdown Voltage
- Active Device
- Mode Field
- Surface Field
Organisations
Publications
2025
Accumulation-mode SiC Trench MOSFET (2025)In 2025 17th International Seminar on Power Semiconductors (ISPS) (pp. 1-7) (International Seminar on Power Semiconductors (ISPS); Vol. 2025). IEEE. Abnavi, H., Steenge, C., Dulfer, S. D., Berenschot, E. J. W., Tas, N. R. & Hueting, R. J. E.https://doi.org/10.1109/ISPS65707.2025.11189975A New Silicon Accumulation-Mode Trench Bidirectional Switch (2025)IEEE Transactions on Electron Devices, 72(4), 1900-1906. Abnavi, H., Steenge, C., Berenschot, J. W., Tas, N. R. & Hueting, R. J. E.https://doi.org/10.1109/TED.2025.3546582
2024
Vertical silicon nanowedge formation by repetitive dry and wet anisotropic etching combined with 3D self-aligned sidewall nanopatterning (2024)Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 42(6). Article 062805. Pordeli, Y., Steenge, C., Berenschot, E. J. W., Hueting, R. J. E., Migliorini, A., Parkin, S. S. P. & Tas, N. R.https://doi.org/10.1116/6.0004024
2023
Self-aligned fabrication of nanomechanical and nanoelectronic devices by convex corner lithography on silicon wedges (2023)[Contribution to conference › Paper] 8th International Workshop on Nanotechnology and Application, IWNA 2023. Steenge, C., Kooijman, L., van Kampen, C., Borgelink, B., Janssens, Y., Pordeli, Y., Tiggelaar, R., Berenschot, E. & Tas, N.
Research profiles
Address
University of Twente
Carré (building no. 15), room C1510
Hallenweg 23
7522 NH Enschede
Netherlands
University of Twente
Carré C1510
P.O. Box 217
7500 AE Enschede
Netherlands
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