Expertise
Material Science
- Silicon
- Anisotropic Etching
- Metal-Oxide-Semiconductor Field-Effect Transistor
- Surface (Surface Science)
Engineering
- Breakdown Voltage
- Active Device
- Mode Field
- Surface Field
Organisations
Publications
2025
Accumulation-mode SiC Trench MOSFET (2025)In 2025 17th International Seminar on Power Semiconductors (ISPS) (pp. 1-7). IEEE. Abnavi, H., Steenge, C., Dulfer, S. D., Berenschot, E. J. W., Tas, N. R. & Hueting, R. J. E.https://doi.org/10.1109/ISPS65707.2025.11189975A New Silicon Accumulation-Mode Trench Bidirectional Switch (2025)IEEE Transactions on Electron Devices, 72(4), 1900-1906. Abnavi, H., Steenge, C., Berenschot, J. W., Tas, N. R. & Hueting, R. J. E.https://doi.org/10.1109/TED.2025.3546582
2024
Vertical silicon nanowedge formation by repetitive dry and wet anisotropic etching combined with 3D self-aligned sidewall nanopatterning (2024)Journal of Vacuum Science and Technology B, 42(6). Article 062805. Pordeli, Y., Steenge, C., Berenschot, E. J. W., Hueting, R. J. E., Migliorini, A., Parkin, S. S. P. & Tas, N. R.https://doi.org/10.1116/6.00040243D self-aligned nano junctions in silicon fractals (2024)[Contribution to conference › Poster] MESA+ Meeting 2024. Steenge, C., Dawood, F., van der Zouw, K., Kooijman, L. J., Berenschot, E. J. W., Hueting, R. J. E. & Tas, N. R.
2023
Self-aligned fabrication of nanomechanical and nanoelectronic devices by convex corner lithography on silicon wedges (2023)[Contribution to conference › Paper] 8th International Workshop on Nanotechnology and Application, IWNA 2023. Steenge, C., Kooijman, L., van Kampen, C., Borgelink, B., Janssens, Y., Pordeli, Y., Tiggelaar, R., Berenschot, E. & Tas, N.
Research profiles
Address
University of Twente
Carré (building no. 15), room C1510
Hallenweg 23
7522 NH Enschede
Netherlands
University of Twente
Carré C1510
P.O. Box 217
7500 AE Enschede
Netherlands
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