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prof.dr. D.J. Gravesteijn (Dirk)

Guest Supporting Staff

Expertise

Physics & Astronomy
Cultured Cells
Gallium Nitrides
Random Access Memory
Engineering & Materials Science
Atomic Layer Deposition
Ferroelectric Materials
Gallium Nitride
Lead Zirconate Titanate
Chemistry
Liquid Film

Publications

Recent
Zhou, R. , Li, L., Zhao, W. , Liao, Z. , Nguyen, M. D. , Nunnenkamp, M. , Houwman, E. P. , Koster, G. , Rijnders, A. J. H. M. , Gravesteijn, D. J. , & Hueting, R. J. E. (2020). Polarization effects in ferroelectric gate AlGaN/GaN High Electron Mobility Transistors. In Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020 (pp. 329-332). Article 9170173 (International Symposium on Power Semiconductor Devices and ICs (ISPSD); Vol. 2020). IEEE. https://doi.org/10.1109/ISPSD46842.2020.9170173
Banerjee, S. (2019). From radical-enhanced to pure thermal ALD of gallium and aluminium nitrides. [PhD Thesis - Research UT, graduation UT, University of Twente]. University of Twente. https://doi.org/10.3990/1.9789036548250

UT Research Information System

Contact Details

Visiting Address

University of Twente
Faculty of Electrical Engineering, Mathematics and Computer Science
Carré (building no. 15)
Hallenweg 21
7522NH  Enschede
The Netherlands

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Mailing Address

University of Twente
Faculty of Electrical Engineering, Mathematics and Computer Science
Carré
P.O. Box 217
7500 AE Enschede
The Netherlands