Welcome...

dr.ir. E.P. Houwman (Evert)

Researcher

About Me

Expertise

Engineering & Materials Science
Ferroelectric Materials
Ferroelectric Thin Films
Lead Zirconate Titanate
Polarization
Pulsed Laser Deposition
Thin Films
Chemistry
Pulsed Laser Deposition
Physics & Astronomy
Thin Films

Research

Perovskites form a class of metal oxide materials ABO3 with a diverse range of technologically important material properties. Here A and B are different metal ions. By (partially) substituting these ions with others, for example in AA’BO3 or ABB’O3, one can tailor the properties of the bulk material. These bulk properties are already fairly well known for many interesting perovskites.

For device applications, in particular the incorporation with Si technology, we develop processes to fabricate high quality –preferably epitaxial- thin films and multilayers of different types of perovskites, on different substrates (both –insulating perovskites and buffered Si). In that case the perovskite thin film is strained by the substrate, which in many cases has a significant influence on the film properties.

The influence of the strain on the crystallographic structure (change of lattice parameters and possibly polydomain growth) and the resulting effect on the material properties is studied experimentally and by detailed modeling.

In particular we have studied in detail the halfmetallic and ferromagnetic La0.4Sr0.6MnO3compound under different strain conditions, concentrating on the magnetic and electric properties. A detailed model is developed from which the potential landscape of the magnetization vector in the film can be predicted from the imposed substrate strain. The model was confirmed experimentally for many different strain conditions. Further we were able to relate the unit cel deformations to oxygen-octahedra deformations, which explain the changes in the coupling between the Mn spins.

Presently we work on the ferroelectric and piezoelectric group of materials, especially the subgroupof PbZr1-xTixO3. These materials are important for many micromechanical devices, supercapacitors, energy scavengers. We seek to optimize the piezoelectric and ferroelectric properties for specific applications varying the composition x taking account for the strain by different substrates and deposition conditions, both experimentally and by modeling these systems.

Publications

Recent
Spreitzer, M., Klement, D., Parkelj Potocnik, T., Trstenjak, U., Jovanovic, Z. , Nguyen, M. D. , Yuan, H. , ten Elshof, J. E. , Houwman, E. , Koster, G. , Rijnders, G., Fompeyrine, J., Kornblum, L., Fenning, D. P., Liang, Y., Tong, W. Y., & Ghosez, P. (2021). Epitaxial ferroelectric oxides on silicon with perspectives for future device applications. APL materials, 9(4), [040701]. https://doi.org/10.1063/5.0039161
Zhou, R. , Li, L. , Zhao, W. , Liao, Z. , Nguyen, M. D. , Nunnenkamp, M. , Houwman, E. P. , Koster, G. , Rijnders, A. J. H. M. , Gravesteijn, D. J. , & Hueting, R. J. E. (2020). Polarization effects in ferroelectric gate AlGaN/GaN High Electron Mobility Transistors. In Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020 (pp. 329-332). [9170173] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2020-September). IEEE. https://doi.org/10.1109/ISPSD46842.2020.9170173
Do, M. T. , Houwman, E. P. , Gauquelin, N. , Nguyen, D. M. , Wang, J. , Bégon-Lours, L. C., Blom, F. , Koster, G. , & Rijnders, A. J. H. M. (2020). Mechanisms for polarization fatigue in ferroelectric epitaxial film. Poster session presented at Physics@Veldhoven 2020, veldhoven, Netherlands.

UT Research Information System

Contact Details

Visiting Address

University of Twente
Faculty of Science and Technology
Carré (building no. 15), room C3215
Hallenweg 23
7522NH  Enschede
The Netherlands

Navigate to location

University of Twente
Faculty of Science and Technology
Carré (building no. 15), room C3215
Hallenweg 23
7522NH  Enschede
The Netherlands

Navigate to location

Mailing Address

University of Twente
Faculty of Science and Technology
Carré  C3215
P.O. Box 217
7500 AE Enschede
The Netherlands