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prof.dr. J. Schmitz (Jurriaan)

Full Professor

About Me

Jurriaan Schmitz was born in Elst, The Netherlands in 1967. He received his M.Sc. (1990, cum laude) and Ph.D. (1994) degrees in Experimental Physics at the University of Amsterdam on research carried out at the Nikhef research institute. In 1990 he was a CERN Summer Student. His research work was on new detectors for tracking and energy measurement of high-energy particles, the so-called MSGC and Spaghetti Calorimeter detectors. In this period he proposed the Micro Trench Gas Counter, employing constant-field rather than radial-field gas amplification, and the DME/CO2 gas mixture for miniaturized gaseous detectors.

After his Ph.D. he joined Philips Research as a Senior Scientist (1994-2002), studying CMOS transistor scaling, characterization and reliability. He worked on CMOS transistors from the 0,25 µm to the 90-nm node, studying super-steep retrograde wells, halo (pocket) implants, shallow junctions, GeSi gates, gate depletion and gate-last fabrication. Later he concentrated on characterization and reliability of CMOS devices, and studied the measurement issues arising from excessive gate leakage. He proposed the RF-CV characterization technique. He patented several new transistor architectures as well as inventions related to embedded flash memories and CMOS-APS image sensors.

In 2002 he became full professor at the University of Twente as the successor of Prof. Hans Wallinga. He expanded his research interests to include above-IC technologies and light-from-silicon. With his coworkers and PhD students he worked on a variety of topics such as energy harvesting microchips, radiation imaging detectors on CMOS, and RF-CMOS and RF-MEMS reliability. He currently heads a research group of 30 people and supervises 10 Ph.D. students.

He is technical program committee member of the European Solid-State Device Research Conference (ESSDERC). He acted as Technical Program Chair of the 2008 IEEE International Conference on Microelectronic Test Structures (ICMTS) and General Chairman of the same conference in 2011. He took part in the IEEE IEDM conference organization for 8 years total, including European Arrangements Co-Chair in 2012-2013. Also he was Editor of IEEE Electron Device Letters in 2013-2017. He served as board member of the Dutch Physical Society (NNV) and chaired the IEEE EDS chapter Benelux. He is a member of the Program Council of the Materials Innovation Institute (M2i).

Prof. Schmitz authored or co-authored over 220 journal and conference papers, 18 patents, and three book chapters.

Expertise

Silicon
Cmos
Thin Films
Light Emitting Diodes
Metals
Metals
Tungsten
Thin Films
Tungsten
Atomic Layer Deposition
Wire
Wire
Thin Films
Atomic Layer Deposition
Light Emitting Diodes
Light Emitting Diodes

Research

Jurriaan Schmitz was born in Elst, NL in 1967. He studied in Experimental Physics at the University of Amsterdam and the Nikhef research institute. In 1990 he was a CERN Summer Student. His research work was on MSGC and Spaghetti Calorimeter. He proposed the Micro Trench Gas Counter; and the DME/CO2 gas mixture for miniaturized gaseous detectors. He joined Philips Research as a Senior Scientist (1994-2002), studying CMOS transistor scaling, characterization and reliability. He proposed the RF-CV characterization technique and patented several new transistor architectures. In 2002 he became full professor at the University of Twente. He expanded his research interests to include above-IC technologies and light-from-silicon. He worked on a variety of topics such as energy harvesting microchips, radiation imaging detectors on CMOS, and RF-CMOS and RF-MEMS reliability.

Publications

Recent
Puliyankot, V., Piccolo, G., Hueting, R. J. E., & Schmitz, J. (2018). Towards GHz Switching in SOI Light Emitting Diodes. IEEE transactions on electron devices. DOI: 10.1109/TED.2018.2866517
Çiftpinar, H. E., Stodolny, M. K., Wu, Y., Janssen, G. J. M., Löffler, J., Schmitz, J., ... Geerligs, B. L. J. (2017). Study of screen printed metallization for polysilicon based passivating contacts. Energy procedia, 124, 851-861. DOI: 10.1016/j.egypro.2017.09.242
Stodolny, M. K., Anker, J., Geerligs, B. L. J., Janssen, G. J. M., van de Loo, B. W. H., Melskens, J., ... Romijn, I. (2017). Material properties of LPCVD processed n-type polysilicon passivating contacts and its application in PERPoly industrial bifacial solar cells. Energy procedia, 124, 635-642. DOI: 10.1016/j.egypro.2017.09.250
Dutta, S., Orbe, L., & Schmitz, J. (2017). TCAD analysis of wide-spectrum waveguide in high-voltage SOI CMOS. Paper presented at 17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017, Copenhagen, Denmark.DOI: 10.1109/NUSOD.2017.8009969
Banerjee, S., van der Velde, F. J., Yang, M., Schmitz, J., & Kovalgin, A. Y. (2017). Electrical test structures for verifying continuity of ultra-thin insulating and conducting films. In Electrical test structures for verifying continuity of ultra-thin insulating and conducting films (pp. 1-6). New York: IEEE. DOI: 10.1109/ICMTS.2017.7954258
Dutta, S., Steeneken, P. G., Agarwal, V. V., Schmitz, J., Annema, A. J., & Hueting, R. J. E. (2017). The avalanche-mode superjunction LED. IEEE transactions on electron devices, 64(4), 1612-1618. DOI: 10.1109/TED.2017.2669645
Schmitz, J. (2017). Prospects of efficient band-to-band emission in silicon LEDs. In M. du Plessis (Ed.), Fourth Conference on Sensors, MEMS, and Electro-Optic Systems: 18–20 September 2016, Skukuza, Kruger National Park, South Africa (pp. 2-7). (Proceedings of SPIE; Vol. 10036). SPIE. DOI: 10.1117/12.2245589
Schmitz, J., Nauta, B., & Seijlhouwer, M. (2016). Meer More. Ingenieur, 128(8), 30-33.
Grasser, T., Schmitz, J., & Lemme, M. C. (2016). Editorial: Extended papers selected from ESSDERC 2015. Solid-state electronics, 125, 1-1. DOI: 10.1016/j.sse.2016.09.018

UT Research Information System

Contact Details

Visiting Address

University of Twente
Faculty of Electrical Engineering, Mathematics & Computer Science
Carré (building no. 15), room C2617
Hallenweg 23
7522NH  Enschede
The Netherlands

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Mailing Address

University of Twente
Faculty of Electrical Engineering, Mathematics & Computer Science
Carré  C2617
P.O. Box 217
7500 AE Enschede
The Netherlands

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