I am a PhD researcher at the ICD group here at the UT. I studied physics at the university of Amsterdam where I got my Bsc and Msc degrees. However, currently my interests are in the modelling techniques applicable to circuit simulators.
Organisations
My current research is about the compact modelling of trapping effects in gallium nitride (GaN) high electron mobility transistors (HEMT) for microwave applications. GaN transistors have emerged as key devices for RF and high power applications due to their superior material properties, however the performance of these devices is plagued by transient effects on widely different timescales. These time scales can be of the order of seconds, which for a high speed transistor might as well be eternity. These transient effects are attributed to carrier trapping in different parts of these devices, however the exact effects often only become apparent when full device is being tested. Compact models including trapping are necessary for designers to compensate for the effect of trapping and reduce the amount of iterations necessary to get a working product.
Scan the QR code or