Carré
Guest staff

L.K. Nanver (Lis)

Researcher (Guest)
EEMCS-EE-IDS
Carré C2613
l.k.nanver@utwente.nl
+31534891567
Business card

Expertise

  • Physics

    • Silicon
    • Diode
    • Deposition

  • Material Science

    • Boron
    • Devices
    • Surface
    • Temperature
    • Chemical Vapor Deposition

Organisations

Publications

2024

Impact of the Ge-Si interfacial barrier on the temperature-dependent performance of PureGaB Ge-on-Si p + n photodiodes (2024)Optics express, 32(20), 35542-35550. Article #530466. Marković, L., Knežević, T., Nanver, L. K., Attariabad, A., Azizur-Rahman, K. M., Mah, J. J., Wang, K. L. & Suligoj, T.https://doi.org/10.1364/OE.530466Broadband PureB Ge-on-Si photodiodes (2024)IEEE electron device letters, 45(6), 1040-1043. Nanver, L. K., Hassan, V. V., Attariabad, A., Rosson, N. & Arena, C. J.https://doi.org/10.1109/LED.2024.3391729

2023

Identifying nano-Schottky diode currents in silicon diodes with 2D interfacial layers (2023)In 2023 35th International Conference on Microelectronic Test Structure (ICMTS) (IEEE International Conference on Microelectronic Test Structures; Vol. 2023-March). IEEE. Knezevic, T. & Nanver, L. K.https://doi.org/10.1109/ICMTS55420.2023.10094164Batch furnace CVD of pure boron layers on Si and GaN substrates for lowleakage- current diode fabrication (2023)JST: Engineering and Technology for Sustainable Development, 33(2), 29-35. Vu, T. T. H., Batenburg, K. M., Aarnink, A. A. I., Knežević, T., Liu, X. & Nanver, L. K.https://doi.org/10.51316/jst.165.etsd.2023.33.2.5

2022

Optical detectors (2022)In Advances in Semiconductor Technologies: Selected Topics Beyond Conventional CMOS (pp. 211-229). Wiley-Blackwell. Nanver, L. & Kneževic, T.https://doi.org/10.1002/9781119869610.ch11Checks on temperature during on-wafer I-V characterization of Si diodes made with 2-D interfacial layers (2022)In 2022 IEEE 34th International Conference on Microelectronic Test Structures, ICMTS 2022 - Proceedings (pp. 149-154). IEEE. Van Zoeren, J. & Nanver, L. K.https://doi.org/10.1109/ICMTS50340.2022.9898239

2021

Nanolayer boron-semiconductor interfaces and their device applications (2021)Solid-state electronics, 186. Article 108041. Nanver, L. K., Qi, L., Liu, X. & Knežević, T.https://doi.org/10.1016/j.sse.2021.108041Optoelectrical Operation Stability of Broadband PureGaB Ge-on-Si Photodiodes with Anomalous Al-Mediated Sidewall Contacting (2021)Journal of electronic materials, 50(12), 7026-7036. Krakers, M., Knežević, T. & Nanver, L. K.https://doi.org/10.1007/s11664-021-09233-8Modeling and Simulation Study of Electrical Properties of Ge-on-Si Diodes with Nanometer-thin PureGaB Layer (2021)In 2021 44th International Convention on Information, Communication and Electronic Technology, MIPRO 2021 - Proceedings (pp. 64-69). IEEE. Markovic, L., Knezevic, T., Nanver, L. K. & Suligoj, T.https://doi.org/10.23919/MIPRO52101.2021.9597002Low temperature pure boron layer deposition for silicon diode and micromachining applications (2021)[Thesis › PhD Thesis - Research UT, graduation UT]. University of Twente. Liu, X.https://doi.org/10.3990/1.9789036552547

Research profiles

Courses academic year 2024/2025

Courses in the current academic year are added at the moment they are finalised in the Osiris system. Therefore it is possible that the list is not yet complete for the whole academic year.

Courses academic year 2023/2024

Address

University of Twente

Carré (building no. 15), room C2613
Hallenweg 23
7522 NH Enschede
Netherlands

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