Carré
Guest staff

L.K. Nanver (Lis)

Researcher (Guest)
EEMCS-EE-IDS
Carré C2613
l.k.nanver@utwente.nl
+31534891567
Business card

Expertise

  • Physics

    • Silicon
    • Diode
    • Deposition

  • Material Science

    • Boron
    • Devices
    • Surface
    • Temperature
    • Chemical Vapor Deposition

Organisations

Publications

2024
Broadband PureB Ge-on-Si photodiodes, 1040-1043. Nanver, L. K., Hassan, V. V., Attariabad, A., Rosson, N. & Arena, C. J.https://doi.org/10.1109/LED.2024.3391729
2023
Identifying nano-Schottky diode currents in silicon diodes with 2D interfacial layersIn 2023 35th International Conference on Microelectronic Test Structure (ICMTS). IEEE. Knezevic, T. & Nanver, L. K.https://doi.org/10.1109/ICMTS55420.2023.10094164
2022
Optical detectorsIn Advances in Semiconductor Technologies: Selected Topics Beyond Conventional CMOS (pp. 211-229). Wiley-Blackwell. Nanver, L. & Kneževic, T.https://doi.org/10.1002/9781119869610.ch11Checks on temperature during on-wafer I-V characterization of Si diodes made with 2-D interfacial layersIn 2022 IEEE 34th International Conference on Microelectronic Test Structures, ICMTS 2022 - Proceedings (pp. 149-154). IEEE. Van Zoeren, J. & Nanver, L. K.https://doi.org/10.1109/ICMTS50340.2022.9898239
2021
Nanolayer boron-semiconductor interfaces and their device applications, Article 108041. Nanver, L. K., Qi, L., Liu, X. & Knežević, T.https://doi.org/10.1016/j.sse.2021.108041Optoelectrical Operation Stability of Broadband PureGaB Ge-on-Si Photodiodes with Anomalous Al-Mediated Sidewall Contacting, 7026-7036. Krakers, M., Knežević, T. & Nanver, L. K.https://doi.org/10.1007/s11664-021-09233-8Modeling and Simulation Study of Electrical Properties of Ge-on-Si Diodes with Nanometer-thin PureGaB LayerIn 2021 44th International Convention on Information, Communication and Electronic Technology, MIPRO 2021 - Proceedings (pp. 64-69). IEEE. Markovic, L., Knezevic, T., Nanver, L. K. & Suligoj, T.https://doi.org/10.23919/MIPRO52101.2021.9597002Low temperature pure boron layer deposition for silicon diode and micromachining applications. University of Twente. Liu, X.https://doi.org/10.3990/1.9789036552547Low-Temperature Electrical Performance of PureB Photodiodes Revealing Al-Metallization-Related Degradation of Dark Currents, 2810 - 2817. Knezevic, T., Suligoj, T., Capan, I. & Nanver, L. K.https://doi.org/10.1109/TED.2021.3074117On the Many Applications of Nanometer-Thin Pure Boron Layers in IC and Microelectromechanical Systems Technology, 2472-2482. Nanver, L. K., Knežević, T., Liu, X., D. Thammaiah, S. & Krakers, M.https://doi.org/10.1166/jnn.2021.19112

Research profiles

Courses academic year 2023/2024

Courses in the current academic year are added at the moment they are finalised in the Osiris system. Therefore it is possible that the list is not yet complete for the whole academic year.

Courses academic year 2022/2023

Address

University of Twente

Carré (building no. 15), room C2613
Hallenweg 23
7522 NH Enschede
Netherlands

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