dr.ir. R.J.E. Hueting (Ray)

Associate Professor

About Me

Ray Hueting (1968) obtained his MSc (cum laude) and Ph.D. in Electrical Engineering from the Delft University of Technology in 1992 and 1997, respectively. His Ph.D. thesis dealt with the device physics of SiGe-based heterojunction bipolar transistors. He then joined Philips Semiconductors for 1.5 years and Philips Research for 7 years, to work on the physics, design and characterization of RF and power devices. In 2005 he joined the Integrated Devices & Systems group (formerly Semiconductor Components group) at the Electrical Engineering department of the University of Twente, The Netherlands. In 2021 he joined the Power electronics & EMC (PE) group in the same department. He has been an associate professor in the field of power semiconductor devices, semiconductor device physics and modelling. His main interests are power semiconductor devices, CMOS-based devices, electro-optical devices, passives and packaging.

Ray Hueting authored or co-authored over 100 scientific papers and holds 35 US patents. He is a recipient of the Philips Research invention ("dovo") award (bronze medal). He is (co)inventor of various devices, such as the charge-plasma diode, the piezoelectric field-effect transistor as a steep-subthreshold switch, and the optocoupler in commercial CMOS. He is an IEEE Senior Member, and has been a technical program committee member of the ISPSD, the ESSDERC and EDTM conferences.

Specialties: Power semiconductor devices, Semiconductor device physics, simulation, characterisation and modelling


Engineering & Materials Science
Ferroelectric Materials
Lead Zirconate Titanate
Light Emitting Diodes
Physics & Astronomy
Light Emitting Diodes


Annema, A. J. , & Hueting, R. (2021). Optocoupling in CMOS: Workshop Session "Devices and Circuits for Electro-Optics". IEEE 47th European Solid-State Circuits Conference 2021, fully virtual, Milan, Italy.
Vermeer, M. L. , Hueting, R. J. E., Pirro, L., Hoentschel, J. , & Schmitz, J. (2021). Interface States Characterization of UTB SOI MOSFETs From the Subthreshold Current. IEEE Transactions on Electron Devices, 68(2), 497-502. [9305941]. https://doi.org/10.1109/TED.2020.3043223
Zhou, R. , Li, L. , Zhao, W. , Liao, Z. , Nguyen, M. D. , Nunnenkamp, M. , Houwman, E. P. , Koster, G. , Rijnders, A. J. H. M. , Gravesteijn, D. J. , & Hueting, R. J. E. (2020). Polarization effects in ferroelectric gate AlGaN/GaN High Electron Mobility Transistors. In Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020 (pp. 329-332). [9170173] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2020-September). IEEE. https://doi.org/10.1109/ISPSD46842.2020.9170173
Gupta, G., Mema, F. , & Hueting, R. (2020). InAs Electron-Hole Bilayer LED. In 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) [9041897] IEEE and IEEE Electron Device Society. https://doi.org/10.1109/EUROSOI-ULIS45800.2019.9041897

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Module coordinator and lecturer of module "Device Physics (201400430)" (EE-MOD7a) for 2nd year EE-BSc students.

Lecturer of Semiconductor Devices in the module "Materials Science & Engineering (201400158)" (AT-MOD6a) for 2nd year AT-BSc students.

Lecturer of "Advanced Semiconductor Device Physics (201900135)" for EE-MSc students.

Affiliated Study Programmes


Courses Academic Year  2021/2022

Courses in the current academic year are added at the moment they are finalised in the Osiris system. Therefore it is possible that the list is not yet complete for the whole academic year.

Courses Academic Year  2020/2021

Contact Details

Visiting Address

University of Twente
Faculty of Electrical Engineering, Mathematics and Computer Science
Carré (building no. 15), room C2613
Hallenweg 23
7522NH  Enschede
The Netherlands

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Mailing Address

University of Twente
Faculty of Electrical Engineering, Mathematics and Computer Science
Carré  C2613
P.O. Box 217
7500 AE Enschede
The Netherlands

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