Ray Hueting (1968) obtained his MSc (cum laude) and Ph.D. in Electrical Engineering from the Delft University of Technology in 1992 and 1997, respectively. His Ph.D. thesis dealt with the device physics of SiGe-based heterojunction bipolar transistors. He then joined Philips Semiconductors for 1.5 years and Philips Research (Eindhoven & Leuven) for 7 years, to work on the physics, design and characterization of RF and power devices. In 2005 he joined the Integrated Devices & Systems group at the Electrical Engineering department of the University of Twente, The Netherlands. In 2021 he joined the Power electronics (PE) group in the same department. He has been an associate professor in the field of power semiconductor devices, semiconductor device physics and modelling. His main interests are power semiconductor devices, CMOS-based devices, electro-optical devices, passives and system integration (e.g., packaging).
Ray Hueting authored or co-authored over 120 scientific papers and holds 35 US patents. He is a recipient of the Philips Research invention ("dovo") award (bronze medal). He is (co)inventor of various devices, such as the charge-plasma diode, the piezoelectric field-effect transistor as a steep-subthreshold switch, and the optocoupler in commercial CMOS. He is an IEEE Senior Member, and has been a technical program committee member of the ISPSD, the ESSDERC and EDTM conferences.
Expertise: Power semiconductor devices, Semiconductor device physics, simulation, characterisation and modelling
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