Ray Hueting (1968) obtained his MSc (cum laude) and Ph.D. in Electrical Engineering from the Delft University of Technology in 1992 and 1997, respectively. His Ph.D. thesis dealt with the device physics of SiGe-based heterojunction bipolar transistors. He then joined Philips Semiconductors for 1.5 years and Philips Research for 7 years, to work on the physics, design and characterization of RF and power devices. In 2005 he joined the Integrated Devices & Systems group (formerly Semiconductor Components group) at the Electrical Engineering department of the University of Twente, The Netherlands. In 2021 he joined the Power electronics & EMC (PE) group in the same department. He has been an associate professor in the field of power semiconductor devices, semiconductor device physics and modelling. His main interests are power semiconductor devices, CMOS-based devices, electro-optical devices, passives and packaging.

Ray Hueting authored or co-authored over 100 scientific papers and holds 35 US patents. He is a recipient of the Philips Research invention ("dovo") award (bronze medal). He is (co)inventor of various devices, such as the charge-plasma diode, the piezoelectric field-effect transistor as a steep-subthreshold switch, and the optocoupler in commercial CMOS. He is an IEEE Senior Member, and has been a technical program committee member of the ISPSD, the ESSDERC and EDTM conferences.

Specialties: Power semiconductor devices, Semiconductor device physics, simulation, characterisation and modelling  

Expertise

  • Material Science

    • Devices
    • Diode
    • Transistor
  • Physics

    • Silicon
    • Avalanche
    • Electric Potential
    • Insulators
  • Engineering

    • Light-Emitting Diode

Organisations

Publications

2024

Advanced packaging for SiC power modules (2024)[Thesis › PhD Thesis - Research external, graduation UT]. University of Twente. Wang, L.https://doi.org/10.3990/1.9789036561730Ruggedness of Silicon Power MOSFETs–Part II: Device Design Failures and Modeling: A Review (2024)IEEE Transactions on Electron Devices, 71(6), 3458-3469. Tambone, R., Ferrara, A., Siemieniec, R., Wood, A., Magrini, F. & Hueting, R. J. E.https://doi.org/10.1109/TED.2024.3394463Ruggedness of Silicon Power MOSFETs—Part I: Cell Structure Design Related Failure: A Review (2024)IEEE Transactions on Electron Devices, 71(6), 3445-3457. Tambone, R., Ferrara, A., Siemieniec, R., Wood, A., Magrini, F. & Hueting, R. J. E.https://doi.org/10.1109/TED.2024.3394452Development of Pressure Contact Technology for Multi-chip SiC Modules with Low Parasitics (2024)In 2024 IEEE Applied Power Electronics Conference and Exposition (APEC) (pp. 202-209) (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC). IEEE. Wang, L., Wang, W., Rietveld, G. & Hueting, R. J. E.https://doi.org/10.1109/APEC48139.2024.10509116Opportunities and Challenges of Pressure Contact Packaging for Wide Bandgap Power Modules (2024)IEEE transactions on power electronics, 39(2), 2401-2419. Wang, L., Wang, W., Zeng, K., Deng, J., Rietveld, G. & Hueting, R. J. E.https://doi.org/10.1109/TPEL.2023.3332050A Systematic Comparison Study of Different Bonding Technologies for Large Substrate Attachment of Power Electronics (2024)In International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2024 (pp. 2055-2061) (PCIM Europe Conference Proceedings; Vol. 2024-June). Mesago PCIM GmbH. Wang, L., Rietveld, G. & Hueting, R. J. E.

2023

A new SiC power module assembly based on silver sintering bonding (2023)In 2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe. IEEE. Wang, L., Lei, Z., Liang, R., Rietveld, G. & Hueting, R. J. E.https://doi.org/10.23919/EPE23ECCEEurope58414.2023.10264386Reconfigurable Double Pulse Test Setup for Si and Wide Bandgap Power FETs (2023)In PCIM Europe 2023; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Alimawi, M., Koch, P., Venugopal, P. & Hueting, R.https://doi.org/10.30420/566091165Distributed field plate effects in split-gate trench MOSFETs (2023)In 2023 35th International Conference on Microelectronic Test Structure, ICMTS 2023 (IEEE International Conference on Microelectronic Test Structures; Vol. 2023-March). IEEE. Tambone, R., Ferrara, A., Magrini, F., Hoffmann, A., Wood, A., Noebauer, G., Gondro, E. & Hueting, R. J. E.https://doi.org/10.1109/ICMTS55420.2023.10094167Review of Topside Interconnections for Wide Bandgap Power Semiconductor Packaging (2023)IEEE transactions on power electronics, 38(1), 472-490. Wang, L., Wang, W., Hueting, R. J. E., Rietveld, G. & Ferreira, J. A.https://doi.org/10.1109/TPEL.2022.3200469

Research profiles

Module coordinator and lecturer of module "Device Physics (201400430)" (EE-MOD7a) for 2nd year EE-BSc students.

Lecturer of Semiconductor Devices in the module "Materials Science & Engineering (201400158)" (AT-MOD6a) for 2nd year AT-BSc students.

Lecturer of "Advanced Semiconductor Device Physics (201900135)" for EE-MSc students.

Affiliated study programs

Courses academic year 2024/2025

Courses in the current academic year are added at the moment they are finalised in the Osiris system. Therefore it is possible that the list is not yet complete for the whole academic year.

Courses academic year 2023/2024

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