dr.ir. R.J.E. Hueting (Ray)

Associate Professor

About Me

Ray Hueting (1968) obtained his MSc (cum laude) and Ph.D. in Electrical Engineering from the Delft University of Technology in 1992 and 1997, respectively. His Ph.D. thesis dealt with the device physics of SiGe-based heterojunction bipolar transistors. He then joined Philips Semiconductors for 1.5 years and Philips Research for 7 years, to work on the physics, design and characterization of RF and power devices. In 2005 he joined the Semiconductor Components Laboratory at the Electrical Engineering department of the University of Twente, The Netherlands. Since March 2011 he has been an associate professor in the field of semiconductor device physics and modelling.

Ray Hueting authored or co-authored more than 70 scientific papers and holds 35 US patents. He is an IEEE Senior Member, was and is a technical program committee member of the ISPSD and the ESSDERC conference, respectively.

Specialties: Semiconductor device physics, simulation, characterisation and modelling


Light Emitting Diodes
Electric Fields
Light Emitting Diodes


Recent Articles
Hajlasz, M., Donkers, J. J. T. M., Pandey, S., Hurkx, F., Hueting, R. J. E., & Gravesteijn, D. J. (2017). Barrier Height Variation in Ni-Based AlGaN/GaN Schottky Diodes. IEEE transactions on electron devices, 64(10), 4050-4056. [8019820]. DOI: 10.1109/TED.2017.2742991
Dutta, S., Steeneken, P. G., Agarwal, V. V., Schmitz, J., Annema, A. J., & Hueting, R. J. E. (2017). The avalanche-mode superjunction LED. IEEE transactions on electron devices, 64(4), 1612-1618. DOI: 10.1109/TED.2017.2669645

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Contact Details

Visiting Address

University of Twente
Faculty of Electrical Engineering, Mathematics & Computer Science
Carré (building no. 15), room 2613
Hallenweg 23
7522NH  Enschede
The Netherlands

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Mailing Address

University of Twente
Faculty of Electrical Engineering, Mathematics & Computer Science
Carré  2613
P.O. Box 217
7500 AE Enschede
The Netherlands

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