Carré

dr.ir. R.J.E. Hueting (Ray)

Associate Professor
EEMCS-EE-PE
Carré C2613
r.j.e.hueting@utwente.nl
+31534892754
Business card

Ray Hueting (1968) obtained his MSc (cum laude) and Ph.D. in Electrical Engineering from the Delft University of Technology in 1992 and 1997, respectively. His Ph.D. thesis dealt with the device physics of SiGe-based heterojunction bipolar transistors. He then joined Philips Semiconductors for 1.5 years and Philips Research (Eindhoven & Leuven) for 7 years, to work on the physics, design and characterization of RF and power devices. In 2005 he joined the Integrated Devices & Systems group at the Electrical Engineering department of the University of Twente, The Netherlands. In 2021 he joined the Power electronics (PE) group in the same department. He has been an associate professor in the field of power semiconductor devices, semiconductor device physics and modelling. His main interests are power semiconductor devices, CMOS-based devices, electro-optical devices, passives and system integration (e.g., packaging).

Ray Hueting authored or co-authored over 120 scientific papers and holds 35 US patents. He is a recipient of the Philips Research invention ("dovo") award (bronze medal). He is (co)inventor of various devices, such as the charge-plasma diode, the piezoelectric field-effect transistor as a steep-subthreshold switch, and the optocoupler in commercial CMOS. He is an IEEE Senior Member, and has been a technical program committee member of the ISPSD, the ESSDERC and EDTM conferences.

Expertise: Power semiconductor devices, Semiconductor device physics, simulation, characterisation and modelling  

Expertise

  • Material Science

    • Devices
    • Silicon
    • Transistor
    • Diode

  • Physics

    • Avalanche
    • Electric Potential
    • Insulators

  • Engineering

    • Light-Emitting Diode

Organisations

Publications

2025

A Double-Sided Cooling SiC Power Module with Pressure Contact Packaging (2025)IEEE Journal of Emerging and Selected Topics in Power Electronics, 13(5), 5713-5722. Article 0b000064941030c9. Wang, L., Wang, W., Zeng, K., Zhang, R., Rietveld, G. & Hueting, R. J. E.https://doi.org/10.1109/JESTPE.2025.3580428Impact of Defects on the Low-Field Electron Mobility in GaN-on-Si HEMTs (2025)Journal of the Electron Devices Society, 13, 516-523. Zhou, R., Gravesteijn, D. J. & Hueting, R. J. E.https://doi.org/10.1109/JEDS.2025.3577260Thermal Shock Reliability of Silver-Sintered Bonding of Metal-Plated Aluminum Surfaces (2025)IEEE transactions on device and materials reliability, 25(2), 203-211. Wang, L., Rietveld, G. & Hueting, R. J. E.https://doi.org/10.1109/TDMR.2025.3554369Behavior of Split-Gate Trench MOSFETs in Critical Conditions Caused by Distributed Effects (2025)IEEE Transactions on Electron Devices, 72(6), 3068-3075. Tambone, R., Ferrara, A., Magrini, F. & Hueting, R. J. E.https://doi.org/10.1109/TED.2025.3564257Design and Fabrication of a Ceramic Substrate-Embedded SiC Power Module (2025)IEEE Transactions on Components, Packaging and Manufacturing Technology, 15(5), 938-948. Wang, L., Deng, J., Zeng, K., Cheng, H., Wu, Q., Lin, J., Rietveld, G. & Hueting, R. J. E.https://doi.org/10.1109/TCPMT.2025.3538658Impact of the collector structure on the performance of the insulated gate bipolar transistor (2025)Microelectronics, 159. Article 106651. van Zoeren, J., Gupta, G., Boksteen, B., Nanver, L. K. & Hueting, R. J. E.https://doi.org/10.1016/j.mejo.2025.106651A New Silicon Accumulation-Mode Trench Bidirectional Switch (2025)IEEE Transactions on Electron Devices, 72(4), 1900-1906. Abnavi, H., Steenge, C., Berenschot, J. W., Tas, N. R. & Hueting, R. J. E.https://doi.org/10.1109/TED.2025.3546582Thermo-mechanical Design of Heterogeneous Integrated Wide Bandgap Power Modules (2025)[Thesis › PhD Thesis - Research UT, graduation UT]. University of Twente. Wang, L.https://doi.org/10.3990/1.9789036565127Electrical and 850 nm Optical Characterization of Back-Gate Controlled 22 nm FDSOI PIN-Diodes Without Front-Gate (2025)Journal of the Electron Devices Society, 13, 190-199. Bakker, J. H. T., Motycki, M. Ł., Hueting, R. J. E., Annema, A.-J. & Oude Alink, M.https://doi.org/10.1109/JEDS.2025.3537290

2024

Vertical silicon nanowedge formation by repetitive dry and wet anisotropic etching combined with 3D self-aligned sidewall nanopatterning (2024)Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 42(6). Article 062805. Pordeli, Y., Steenge, C., Berenschot, E. J. W., Hueting, R. J. E., Migliorini, A., Parkin, S. S. P. & Tas, N. R.https://doi.org/10.1116/6.0004024

Research profiles

Module coordinator and lecturer of module "Device Physics (201400430)" (EE-MOD7a) for 2nd year EE-BSc students.

Lecturer of Semiconductor Devices in the module "Materials Science & Engineering (201400158)" (AT-MOD6a) for 2nd year AT-BSc students.

Lecturer of "Advanced Semiconductor Device Physics (201900135)" for EE-MSc students.

Affiliated study programs

Courses academic year 2025/2026

Courses in the current academic year are added at the moment they are finalised in the Osiris system. Therefore it is possible that the list is not yet complete for the whole academic year.

Courses academic year 2024/2025

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