Expertise
Engineering & Materials Science
# Buffer Layers
# Ferroelectric Materials
# High Electron Mobility Transistors
# Lead Zirconate Titanate
# Magnesia
# Monolayers
# Polarization
# Two Dimensional Electron Gas
Organisations
Publications
Recent
Zhou, R.
, Li, L.
, Zhao, W.
, Liao, Z.
, Nguyen, M. D.
, Nunnenkamp, M.
, Houwman, E. P.
, Koster, G.
, Rijnders, A. J. H. M.
, Gravesteijn, D. J.
, & Hueting, R. J. E. (2020).
Polarization effects in ferroelectric gate AlGaN/GaN High Electron Mobility Transistors. In
Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020 (pp. 329-332). [9170173] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2020-September). IEEE.
https://doi.org/10.1109/ISPSD46842.2020.9170173
Contact Details
Visiting Address
University of Twente
Faculty of Electrical Engineering, Mathematics and Computer Science
Carré
(building no. 15), room C2732
Hallenweg 23
7522NH Enschede
The Netherlands
Mailing Address
University of Twente
Faculty of Electrical Engineering, Mathematics and Computer Science
Carré
C2732
P.O. Box 217
7500 AE Enschede
The Netherlands